Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Electronics Letters

Volumn 35, Issue 13, 1999, Pages 1082-1083

  Yang, X ^a   Jurkovic, M J ^a   Heroux, J B ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ACTIVE AGENTS;

SEMICONDUCTING INDIUM GALLIUM ARSENIC NITRIDE;

QUANTUM WELL LASERS;

EID: 0032632839     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990763     Document Type: Article

References (11)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl Phys., 1996, 35, pp. 1273-1275
2. XIN, H.P., and TU, C.W.: 'GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy', Appl. Phys. Lett., 1998, 72, pp. 2442-2444
3. YANG, X., HEROUX, J.B., JURKOVIC, M.J., and WANG, W.I.: 'Photoluminescence of As-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy', to be published in J. Vac. Sci. Tech. B, 1999, 17,
4. SATO, S., OSAWA, Y., and SAITOH, T.: 'Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., 1997, 36, pp. 2671-2675
5. SATO, S., and SATOH, S.: 'Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition', Electron. Lett., 1998, 34, pp. 1495-1497
6. PAN, Z., MIYAMOTO, T., SCHLENKER, D., SATO, S., KOYAMA, F., and IGA, K.: 'Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine', J. Appl. Phys. Lett., 1998, 84, pp. 6409-6411
7. KITATANI, T., KONDOW, M., NAKATSUKA, S., YAZAWA, Y., and OKAI, M.: 'Room-temperature lasing operation of GaInNAs-GaAs single quantum-well laser diodes', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 206-209
8. SATO, S., OSAWA, Y., SAITOH, T., and FUJIMURA, I.: 'Room-temperature pulsed operation of 1.3-μm GaInNAs/GaAs laser diode', Electron. Lett., 1997, 33, pp. 1386-1387
9. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and VONI, K.: '1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
10. COREL, M., REUTER, M.C., KAXIRAS, E., and TROMP, R.M.: 'Surfactants in epitaxial growth', Phys. Rev. Lett., 1989, 63, pp. 632-635
11. GRANDJEAN, N., MASSIES, J., and ETGENS, V.H.: 'Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layer', Phys. Rev. Lett., 1992, 69, pp. 796-799