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Applied Physics Letters

Volumn 76, Issue 7, 2000, Pages 795-797

High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

(4) Yang, X a Heroux, J B a Jurkovic, M J a Wang, W I a

a Columbia University ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000799819 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.125587 Document Type: Article

Times cited : (59)

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