MOVPE growth of strained InGaAsN/GaAs quantum wells

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 416-420

  Saito, Hisao ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Dimethyl hydrazine; InGaAsN; MOVPE; Strained quantum well laser

Indexed keywords

ANNEALING; ENERGY GAP; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DIMETHYLHYDRAZINE; HYDROGEN DEPASSIVATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00666-6     Document Type: Article

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