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Volumn 12, Issue 1, 2000, Pages 7-9

Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

EID: 0033881196     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.817429     Document Type: Article
Times cited : (14)

References (11)
  • 2
    • 0032119157 scopus 로고    scopus 로고
    • Room temperature pulsed operation of strained GaInNas/GaAs double quantum well laser diode grown by metal organic chemical vapor deposition
    • S. Sato and S. Satoh, "Room temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapor deposition," Electron. Lett., vol. 34, pp. 1495-1497, 1998.
    • (1998) Electron. Lett. , vol.34 , pp. 1495-1497
    • Sato, S.1    Satoh, S.2
  • 3
    • 0030289447 scopus 로고    scopus 로고
    • Room temperature continuous wave operation of GaInNAs/GaAs laser diode
    • M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room temperature continuous wave operation of GaInNAs/GaAs laser diode," Electron. Lett., vol. 32, pp. 2244-2245, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 2244-2245
    • Kondow, M.1    Nakatsuka, S.2    Kitatani, T.3    Yazawa, Y.4    Okai, M.5
  • 4
    • 0030286954 scopus 로고    scopus 로고
    • Room-temperature pulsed operation of GaInNAs laser diodes with excellent, high-temperature performance
    • M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room-temperature pulsed operation of GaInNAs laser diodes with excellent, high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 5711-5713, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 5711-5713
    • Kondow, M.1    Nakatsuka, S.2    Kitatani, T.3    Yazawa, Y.4    Okai, M.5
  • 5
    • 0032690362 scopus 로고    scopus 로고
    • (GaN)(InAs)/GaAs single quantum well lasers for emission wavelength in the range 1.28-1.38 μm
    • F. Hohnsdorf, J. Koch, S. Leu, W. Stoltz, B. Borchert, and M. Druminski, "(GaN)(InAs)/GaAs single quantum well lasers for emission wavelength in the range 1.28-1.38 μm," Electron. Lett., vol. 35, pp. 571-572, 1999.
    • (1999) Electron. Lett. , vol.35 , pp. 571-572
    • Hohnsdorf, F.1    Koch, J.2    Leu, S.3    Stoltz, W.4    Borchert, B.5    Druminski, M.6
  • 6
    • 0033204525 scopus 로고    scopus 로고
    • Room-temperature pulsed operation of triple-quantum well GaInNAs/GaAs lasers with low threshold current density grown on misoriented GaAs substrates by MOCVD
    • C. P. Hains, N. Y. Li, K. Yang, X. D. Huang, and J. Cheng, "Room-temperature pulsed operation of triple-quantum well GaInNAs/GaAs lasers with low threshold current density grown on misoriented GaAs substrates by MOCVD," IEEE Photonics Technol. Lett., vol. 11, pp. 1208-1210, 1999.
    • (1999) IEEE Photonics Technol. Lett. , vol.11 , pp. 1208-1210
    • Hains, C.P.1    Li, N.Y.2    Yang, K.3    Huang, X.D.4    Cheng, J.5
  • 8
    • 0032680422 scopus 로고    scopus 로고
    • 1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition
    • S. Sato and S. Satoh, "1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition," Electron. Lett., vol. 35, pp. 1251-1252, 1999.
    • (1999) Electron. Lett. , vol.35 , pp. 1251-1252
    • Sato, S.1    Satoh, S.2
  • 11
    • 0032614048 scopus 로고    scopus 로고
    • Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
    • N. Y. Li, C. P. Hains, K. Yang, J. Lu, J. Cheng, and P. W. Li, "Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes," Appl. Phys. Lett., vol. 75, pp. 1051-1053, 1999.
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 1051-1053
    • Li, N.Y.1    Hains, C.P.2    Yang, K.3    Lu, J.4    Cheng, J.5    Li, P.W.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.