GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

IEEE Photonics Technology Letters

Volumn 10, Issue 2, 1998, Pages 188-190

  Larson, M C ^a   Kondow, M ^a   Kitatani, T ^a   Nakahara, K ^a   Tamura, K ^a   Inoue, H ^a   Uomi, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

Long wavelength; Optical communications; Optical data interconnects; Semiconductor lasers; Vertical cavity surface emitting lasers (VCSEL's)

Indexed keywords

CURRENT DENSITY; OPTICAL COMMUNICATION; OPTICAL INTERCONNECTS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031996467     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.655353     Document Type: Article

References (15)

1. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser," Electron. Lett., vol. 29, no. 10, pp. 913-914, 1993.
2. K. Uomi, S. J. B. Yoo, A. Scherer, R. Bhat, N. C. Andreadakis, C. E. Zah, M. A. Koza, and T. P. Lee, "Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer," IEEE Photon. Technol. Lett., vol. 6, pp. 317-319, Mar. 1994.
3. S. Uchiyama, N. Yokouchi, and T. Ninomiya, "Continuous-wave operation up to 36 °C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 141-142, Feb. 1997.
4. J. J. Dudley, D. I. Babic, R. Mirin, L. Yang, B. I. Miller, R. J. Ram, T. Reynolds, E. L. Hu, and J. E. Bowers, "Low threshold, wafer fused long wavelength vertical cavity lasers," Appl. Phys. Lett., vol. 64, no. 12, pp. 1463-1465, 1994.
5. B. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 1225-1227, Nov. 1995.
6. Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, M. C. Wang, and W. Lin, "1.3-μm vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors," IEEE Photon. Technol. Lett., vol. 9, no. 1, pp. 8-10, 1997.
7. M. Kondow, K. Shinoda, and K. Uomi, specification of Japanese patent application no. 07-340520, filed 27 Dec. 1995.
8. K. Iga, "Vertical cavity surface emitting lasers based on InP and related compounds - bottleneck and corkscrew," presented at the Conf. Indium Phosphide and Related Materials, Apr. 1996, paper ThAl-1.
9. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode," Electron. Lett., vol. 32, no. 24, pp. 2244-2245, 1996.
10. M. C. Larson, M. Kondow, T. Kitatani, Y. Yazawa, and M. Okai, "Room temperature continuous-wave photopumped operation of 1.22 μm GaInN As/GaAs single quantum well vertical-cavity surface-emitting laser," Electron. Lett., vol. 33, no. 11, pp. 959-960, 1997.
11. M. Kondow, T. Kitatani, Y. Yazawa, and M. Okai, "GaInNAs/GaAs: Novel III-V semiconductor," Trans. Mater. Res. Soc. Jpn., vol. 20, pp. 707-709, 1996.
12. M. G. Peters, B. J. Thibeault, D. B. Young, J. W. Scott, F. H. Peters, A. C. Gossard, and L. A. Coldren, "Band-gap engineered digital alloy interfaces of lower resistance vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 63, no. 25, pp. 3411-3413, 1993.
13. S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, " Room-temperature pulsed operation of 1.3 μm GaInNAs/GaAs laser diode," Electron. Lett., vol. 33, no. 16, pp. 1386-1387, 1997.
14. M. Kondow, T. Kitatani, M. C. Larson, K. Nakahara, K. Uomi, and H. Inoue, "GaInNAs Lasers," in Proc. LEOS'97 Conf., 1997, vol. 2, pp. 325-326.
15. T. Kitatani, M. Kondow, K. Nakatsuka, Y. Yazawa, and M. Okai, "Room-temperature lasing operation of GaInAs-GaAs single-quantum-well laser diodes," to be published in IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 206-209, Apr. 1997.