Room temperature continuous-wave photopumped operation of 1.22μm GaInNAs/GaAs single quantum well verticalcavity surface-emitting laser

Electronics Letters

Volumn 33, Issue 11, 1997, Pages 959-960

  Larson, M C ^a   Kondow, M ^a   Kitatani, T ^a   Yazawa, Y ^a   Okai, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT DENSITY; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE;

VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0031143077     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970636     Document Type: Article

References (7)

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6. KONDOW, M., NAKATSUKA, S., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode', Electron. Lett., 1996, 32, (24), pp. 2244-2245
7. KONDOW, M., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'GaInNAs/ GaAs: Novel III-V semiconductor'. Proc. MRS-J Symp. R, Chiba, 1996, pp. 42-45