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Volumn 75, Issue 8, 1999, Pages 1051-1053
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Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
CLADDING (COATING);
CURRENT DENSITY;
HETEROJUNCTIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL RESOLVING POWER;
OPTICAL WAVEGUIDES;
PHOTOLUMINESCENCE;
REFRACTIVE INDEX;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
EPILAYERS;
THRESHOLD CURRENT DENSITY;
QUANTUM WELL LASERS;
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EID: 0032614048
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.124593 Document Type: Article |
Times cited : (30)
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References (16)
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