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Volumn 75, Issue 8, 1999, Pages 1051-1053

Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GalnNAs three-quantum-well laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL RESOLVING POWER; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

EID: 0032614048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124593     Document Type: Article
Times cited : (30)

References (16)
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.