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Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1416-1418

Annealing behavior of p-type Ga0.892In0.108NxAs1-x (0≤X≤0.024) grown by gas-source molecular beam epitaxy

(3) Xin, H P a Tu, C W a Geva, M b

a UNIVERSITY OF CALIFORNIA (United States)

b LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLAR CELLS; SUBSTRATES;

GAS-SOURCE MOLECULAR BEAM EPITAXY (MBE); HIGH-RESOLUTION X RAY ROCKING CURVES (XRC);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032606207 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124711 Document Type: Article

Times cited : (77)

References (12)

1
- 0030079777
- M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part I 35, 1273 (1996).
- (1996) Jpn. J. Appl. Phys., Part I , vol.35 , pp. 1273
- Kondow, M.¹ Uomi, K.² Niwa, A.³ Kitatani, T.⁴ Watahiki, S.⁵ Yazawa, Y.⁶

2
- 0031190535
- S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, Electron. Lett. 33, 1386 (1997).
- (1997) Electron. Lett. , vol.33 , pp. 1386
- Sato, S.¹ Osawa, Y.² Saitoh, T.³ Fujimura, I.⁴

3
- 0031996467
- M. C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue, and K. Uomi, IEEE Photonics Technol. Lett. 10, 188 (1998).
- (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 188
- Larson, M.C.¹ Kondow, M.² Kitatani, T.³ Nakahara, K.⁴ Tamura, K.⁵ Inoue, H.⁶ Uomi, K.⁷

4
- 0344203292
- K. Nakahara, M. Kondow, T. Kitatani, M. Larson, and K. Uomi, IEEE Photonics Technol. Lett. 10, 487 (1998).
- (1998) IEEE Photonics Technol. Lett. , vol.10 , pp. 487
- Nakahara, K.¹ Kondow, M.² Kitatani, T.³ Larson, M.⁴ Uomi, K.⁵

5
- 3843115613
- H. P. Xin and C. W. Tu, Appl. Phys. Lett. 72, 2442 (1998).
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2442
- Xin, H.P.¹ Tu, C.W.²

6
- 0010048039
- S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999).
- (1999) Appl. Phys. Lett. , vol.74 , pp. 729
- Kurtz, S.R.¹ Allerman, A.A.² Jones, E.D.³ Gee, J.M.⁴ Banas, J.J.⁵ Hammons, B.E.⁶

7
- 0022717750
- H. Ito and T. Ishibashi, Jpn. J. Appl. Phys., Part 2 25, L421 (1986).
- (1986) Jpn. J. Appl. Phys., Part 2 , vol.25
- Ito, H.¹ Ishibashi, T.²

8
- 85034175115
- private communication
- P. M. Asbeck (private communication).
- Asbeck, P.M.¹

9
- 0032477206
- J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and B. M. Keyes, J. Cryst. Growth 195, 401 (1999).
- (1999) J. Cryst. Growth , vol.195 , pp. 401
- Geisz, J.F.¹ Friedman, D.J.² Olson, J.M.³ Kurtz, S.R.⁴ Keyes, B.M.⁵

10
- 0032643186
- H. P. Xin, K. L. Kavanagh, M. Kondow, and C W. Tu, J. Cryst. Growth 201/202, 419 (1999).
- (1999) J. Cryst. Growth , vol.201-202 , pp. 419
- Xin, H.P.¹ Kavanagh, K.L.² Kondow, M.³ Tu, C.W.⁴

11
- 0016917534
- H. C. Casey and F. Stern. J. Appl. Phys. 47, 631 (1976).
- (1976) J. Appl. Phys. , vol.47 , pp. 631
- Casey, H.C.¹ Stern, F.²

12
- 0003910876
- edited by A. M. Alper, J. L. Margrave, and A. S. Nowick Academic, New York
- J. C. Phillips, Bonds and Bands in Semiconductors, edited by A. M. Alper, J. L. Margrave, and A. S. Nowick (Academic, New York, 1973).
- (1973) Bonds and Bands in Semiconductors
- Phillips, J.C.¹

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