Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1012-1014

  Pan, Zhong ^a   Miyamoto, Tomoyuki ^a   Schlenker, Dietmar ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Annealing; GaInNAs; Quantum well; Tertiarybutylarsine; V III ratio

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

DIMETHYLHYDRAZINE; PHOTOLUMINESCENCE INTENSITY; TERTIARYBUTYLARSINE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032625286     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1012     Document Type: Article

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