Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition

Electronics Letters

Volumn 34, Issue 15, 1998, Pages 1495-1497

  Sato, S ^a   Satoh, S ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER PULSES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032119157     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981034     Document Type: Article

References (7)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. KONDOW, M., NAKATSUKA, S., KITATANI, T., YAZAWA, Y., and OKAI, M.: 'Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode', Electron. Lett., 1996, 32, (24), pp. 2244-2245
3. NAKAHARA, K., KONDOW, M., KITATANI, T., LALSON, M.C., and UOMI, K.: '1.3μm continuous-wave lasing operation GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
4. SATO, S., OSAWA, Y., and SAITOH, T.: 'Room-temperature operation of GaIn-NAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., 1997, 36, pp. 2671-2675
5. SATO, S., OSAWA, Y., SAITOH, T., and FUJIMURA, I.: 'Room-temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode', Electron. Lett., 1997, 33, (16), pp. 1386-1387
6. SATO S., and SATOH, S.: 'Metalorganic chemical vapour deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes', to be published in J. Crystal Growth
7. SATO, S., and SATOH, S.: 'Growth of GaInNAs by metalorganic chemical vapor deposition using dimethylhydrazine' in HOU, H.Q., SAH, R.E., PEARTON, S.J., REN, F., and WADA, K. (Eds): 'Light emitting devices for optoelectronic applications and the twenty-eighth state-of-the-art program on compound semiconductors'. The Electrochemical Society Proceedings Series, Pennington, NJ, 1998, PV. 98-2, pp. 188-195