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Volumn 11, Issue 8, 1999, Pages 952-954

High-performance long-wavelength (λ approx. 1.3 μm) InGaAsPN quantum-well lasers

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOSPHORUS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 0032640989     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.775310     Document Type: Article
Times cited : (19)

References (16)
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  • 3
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    • M. C. Larson, M. Kondow, T. Kitatani, K. Tamura, Y. Yazawa, and M. Okai, "Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple quantum well vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 1549-1551, 1997.
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  • 7
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  • 8
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    • T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama, and K. Iga, "Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property," J. Cryst. Growth, vol. 197, pp. 67-72, 1998.
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  • 9
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    • S. Sato and S. Satoh, "Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes," J. Cryst. Growth, vol. 192, pp. 381-385, 1998.
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  • 10
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    • State College, PA, Oct.
    • D. E. Mars, D. I. Babic, and Y. Kaneko, "Growth of 1.3 μm InGaAsN laser material on GaAs by MBE," presented at the 17th North Amer. MBE Conf., State College, PA, Oct. 1998.
    • (1998) 17th North Amer. MBE Conf.
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    • S. Sato and S. Satoh, "Room-temperature continuous-wave operation of 1.24 μm GaInNA's lasers grown by metalorganic chemical vapor deposition," presented at the 16th Int. Semiconductor Laser Conf., Nara, Japan, Oct. 1998, paper PD-5.
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  • 13
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.