Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE

Electronics Letters

Volumn 36, Issue 5, 2000, Pages 436-437

  Mereuta, A ^a   Bouchoule, S ^a   Alexandre, F ^a   Decobert, J ^a   Ougazzaden, A ^a,c   Sagnes, I ^b  

^a OPTO+   (France)

^b URA250 CDP   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER RESONATORS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0033874042     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000318     Document Type: Article

References (9)

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2. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3 μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
3. SATO, S., OSAWA, Y., SAITOH, T., and FUJIMURA, I.: 'Room-temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode', Electron. Lett., 1997, 33, pp. 1386-1387
4. 2 as carrier gas', Electron. Lett., 1999, 10, pp. 474-475
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6. KOYAMA, F., SCHLENKER, D., MIYAMOTO, T., CHEN, Z., MATSUTANI, A., SAKAGUCHI, T., and IGA, K.: '1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink', Electron. Lett., 1999, 35, pp. 1079-1081
7. KITATANI, T., KONDOW, M., NAKATSUKA, S., YASAWA, Y., and OKAI, M.: 'Room-temperature pulsed operation of 1.3μm GaInNAs/ GaAs single quantum-well laser diodes', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 206-209
8. MEREUTA, A., OUGAZZADEN, A., BOUCHOULE, S., ALEXANDRE, F., LE ROUX, G., and SAGNES, I.: 'InGaAsN/GaAs quantum well structures in the range of 1.2-1.59μm grown by atmospheric pressure MOVPE'. Proc. 9th European Workshop on MOVPE and Related Growth Techniques, 8-11 June 1999, (Prague), pp. 441-444
9. OUGAZZADEN, A., LE BELLEGO, Y., RAO, E.V.K., JUHEL, M., LEPRINCE, L., and PATRIARCHE, G.: 'Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine', Appl. Phys. Lett., 1997, 70, pp. 2861-2863