1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition

Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1251-1252

  Sato, S ^a   Satoh, S ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CURRENT DENSITY; ELECTRODES; HIGH TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE; X RAY DIFFRACTION;

CONTINUOUS WAVE OPERATION; DOUBLE QUANTUM WELL RIDGE LASERS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032680422     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990858     Document Type: Article

References (10)

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2. ISHIKAWA, H., and SUEMUNE, I.: 'Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer', IEEE Photonics Technol. Lett., 1994, 6, (3), pp. 344-347
3. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
4. SATO, S., OSAWA, Y., SAITOH, T., and FUJIMURA, I.: 'Room-temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode', Electron. Lett., 1997, 33, (16), pp. 1386-138
5. SATO, S., and SATOH, S.: 'Metalorganic chemical vapor deposition of GainNAs lattice matched to GaAs for long-wavelength laser diodes', J. Cryst. Growth, 1998, 192, pp. 381-385
6. KONDOW, M., KITATANI, T., LALSON, M.C., NAKAHARA, K., UOMI, K., and INOUE, H.: 'Gas-source MBE of GaInNAs for long-wavelength laser diodes', J. Cryst. Growth., 1998, 188, pp. 255-259
7. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm', Electron. Lett., 1999, 35, (7), pp. 571-572
8. SATO, S., and SATOH, S.: 'Room-temperature continuous-wave operation of 1.24μm GaInNAs lasers grown by metalorganic chemical vapor deposition'. IEEE 16th Int. Semiconductor Laser Conf., Nara, Japan, 1998, Paper PD-5
9. SATO, S., and SATOH, S.: 'Room-temperature continuous-wave operation of 1.24μm GaInNAs lasers grown by metalorganic chemical vapor deposition', to be published in IEEE J. Sel. Topics Quantum Electron.,
10. 0'. CLEO 98, San Francisco, 1998, Paper CWL5