1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

Electronics Letters

Volumn 35, Issue 25, 1999, Pages 2204-2206

  Borchert, B ^a   Egorov, A Yu ^a,b   Illek, S ^a   Komainda, M ^a   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0033312505     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991513     Document Type: Article

References (6)

1. KONDOW, M., KITATANI, T., NAKATSUKA, S., LARSON, M.C., NAKAHARA, K., YAZAWA, Y., and UOMI, K.: 'GaInNAs: A novel material for long-wavelength semiconductor lasers', IEEE J Sel. Topics Quantum Electron., 1997, 3, pp. 719-730
2. SHAN, W., WALUKIEWICZ, W., AGER, J.W., HALLER, E.E.., GEISZ, J.F., FRIEDMAN, D.J., OLSON, J.M., and KURTZ, S.R.: 'Band anticrossing in GaInNAs alloys', Phys. Rev. Lett., 1999, 82, pp. 1221-1224
3. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm', Electron. Lett., 1999, 35, pp. 571-572
4. SATO, S., and SATOH, S.: '1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition', Electron. Lett., 1999, 35, pp. 1251-1252
5. EGOROV, A.YU., BERNKLAU, D., LIVSHITS, D., USTINOV, V., ALFEROV, ZH.I., and RIECHERT, H.: 'High power CW operation of InGaAsN lasers at 1.3μm', Electron. Lett., 1999, 35, pp. 1643-1644
6. LARSON, M.C., KONDOW, M., KITATANI, T., NAKAHARA, K., TAMURA, K., INOUE, H., and UOMI. K.: 'GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 188-190