High power CW operation of InGaAsN lasers at 1.3μm

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1643-1644

  Egorov, A Yu ^a,b   Bernklau, D ^a   Livshits, D ^a   Ustinov, V ^a   Alferov, Zh I ^a   Riechert, H ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HIGH POWER LASERS; LASER PULSES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTING INDIUM COMPOUNDS;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032670146     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991109     Document Type: Article

References (5)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperatures performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3 μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
3. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of GaInNAs/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm', Electron. Lett., 1999, 35, (7), pp. 571-572
4. MALEEV, N.A., ZHUKOV, A.E., KOVSH, A.R., USTINOV, V.M., EGOROV, A.YU., KRESTNIKOV, I.L., LUNEV, A.V., LEDENTSOV, N.N., KOPEV, P.S., BIMBERG, D., and ALFEROV, ZH.I.: 'MBE growth of InAs/InGaAs quantum dot structures on GaAs substrates for 1.3μm wavelength application'. X European Workshop on MBE, Les Arcs, France, 28 March-1 April 1999
5. KONDOW, M., KITATANI, T., NAKATSUKA, S., LARSON, M.C., NAKAHARA. K., YAZAWA, Y., and UOMI, K.: 'GaInNAs: A novel material for long-wavelength semiconductors laser', IEEE J. Sel. Topics Quantum Electron., 1997, 3, (3), pp. 719-730