Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 206-209

  Kitatani, Takeshi ^b,c,d   Kondow, Masahiko ^b,d,e   Nakatsuka, Shin'ichi ^b,d,f   Yazawa, Yoshiaki ^b,d,g   Okai, Makoto ^{a,b,d,h,i,j,k}  

^a IEEE

^b HITACHI LTD   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g NAGOYA UNIVERSITY   (Japan)

^h NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

ⁱ KYOTO UNIVERSITY   (Japan)

^j UNIVERSITY OF TOKYO   (Japan)

^k MARTLESHAM HEATH   (United Kingdom)

more..

Author keywords

GaInNAs; High temperature performance; Optical fiber communication; Quantum well lasers; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; LASER MODES; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

ROOM TEMPERATURE LASING OPERATION;

QUANTUM WELL LASERS;

EID: 0031109117     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605657     Document Type: Article

References (8)

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8. M. Kondow, K. Uomi, T. Kitatani, S. Watahiki, and Y. Yazawa, "Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy," J. Cryst. Growth, vol. 164, pp. 175-179, 1996.