Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 175-179

  Kondow, M ^a   Uomi, K ^a   Kitatani, T ^a   Watahiki, S ^a   Yazawa, Y ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FABRICATION; FREE RADICALS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY; WAFERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030195652     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00008-5     Document Type: Article

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