1.3-μmcontinuous-wave lasing operation in GaInNAs quantum-well Lasers

IEEE Photonics Technology Letters

Volumn 10, Issue 3, 1998, Pages 487-488

  Nakahara, K ^a   Kondow, M ^a   Kitatani, T ^a   Larson, M C ^b   Uomi, K ^b  

^a RWCP Optical Interconnection H   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM INDIUM NITROGEN ARSENIDE;

QUANTUM WELL LASERS;

EID: 0344203292     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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5. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phvs., vol. 35, pp. 5711-5713, 1996.
6. S. Sato, Y. Osawa, T. Saitoh, and I. Fujimura, "Room-temperature pulsed operation of 1.3-μm GaInNAs/GaAs laser diode," Electron. Lett., vol. 33, pp. 1386-1387, 1997.
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