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Volumn 37, Issue 11, 1998, Pages 5994-5996

Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

Author keywords

GaInNAs; Optical fiber communications; Optical gains; Quantum wells; Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; ELECTRIC CURRENTS; FIBER OPTICS; INDIUM; LIGHT EMISSION; NITROGEN; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032206453     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5994     Document Type: Article
Times cited : (25)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.