Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions;Diélectricques de grille dans les technologies CMOS - Limitations et solutions alternatives

Comptes Rendus de l'Academie des Sciences - Series IV: Physics, Astrophysics

Volumn 1, Issue 7, 2000, Pages 911-927

  Ghibaudo, G ^a   Clerc, R ^a   Vincent, E ^b   Bruyere S ^b   Autran, J L ^a  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Capacitance; CMOS; Gate oxide; High permittivity dielectric; Polydepletion; Reliability; Tunnel effect

Indexed keywords

EID: 0034258773     PISSN: 12962147     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1296-2147(00)01085-4     Document Type: Article

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