Reliable 0.1 μm Ta2O5 transistor manufactured with an almost standard CMOS process

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 131-132

  Devoivre, T ^a   Papadas, C ^a   Setton, M ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SERVICE LIFE; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CURVES; CHARGE PUMPING MEASUREMENTS; CMOS PROCESS; DELAY TIME; GHIBAUDO EXTRAPOLATION METHOD; MEAN TIME TO FAILURE; SHORT CHANNEL EFFECTS;

TRANSISTORS;

EID: 0033281350     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)