Deposition and characterization of ultra-thin tajos layers deposited on silicon from a Ta(OC2Hs)5 precursor

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 75-80

  Chanelffire, C ^c   Autran, J L ^a   Reynard, J P ^b   Michailos, J ^b   Barla, K ^b   Ushikawa, H ^c   Hiroe, A ^c   Shimomura, K ^c   Kakimoto, A ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b STMICROELECTRONICS   (France)

^c TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

TANTALUM PENTOXIDE LAYERS; THERMAL NITRIDED SILICON SUBSTRATES;

ULTRATHIN FILMS;

EID: 0034499195     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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