Effects of the inversion layer centroid on MOSFET behavior

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1915-1922

  Löpez Villanueva, Juan A ^a,b   Cartujo Casinello, Pedro ^a,b   Banqueri, Jesus ^a,b   Gamiz F ^a,b   Rodriguez, Salvador ^a,b  

^a IEEE   (Spain)

^b UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; ELECTRIC CHARGE; SEMICONDUCTOR DEVICE MODELS;

HARTREE APPROXIMATION; INVERSION CHARGE DENSITY; INVERSION LAYER CENTROID;

MOSFET DEVICES;

EID: 0031277264     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641361     Document Type: Article

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