Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 342-347

  Yamamichi, Shintaro ^a,b   Yamamichi, Akiko ^a   Park, Donggun ^a   King, Tsu Jae ^b   Hu, Chenming ^b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

(Ba, Sr)TiO3; Capacitor; DRAM; High dielectric constant; Reliability; SILC; TDDB

Indexed keywords

BARIUM TITANATE; CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; FILM PREPARATION; INDUCED CURRENTS; LEAKAGE CURRENTS; PERMITTIVITY; STRONTIUM COMPOUNDS;

STRESS INDUCED LEAKAGE CURRENTS (SILC); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

THIN FILM DEVICES;

EID: 0033080229     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740900     Document Type: Article

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