Reversibility of charge trapping and silc creation in thin oxides after stress/anneal cycling

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1057-1061

  Riess, P ^a   Kies, R ^a   Ghibaudo, G ^a   Pananakakis, G ^a   Brini, J ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CHARGE; LEAKAGE CURRENTS; STRESSES;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

MICROELECTRONICS;

EID: 0032083621     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00107-3     Document Type: Article

References (12)

1. D. DiMaria, J. Appl. Phys., 47, 4073 (1976).
2. D. DiMaria and D. Arnold, E. Cartier, Appl. Phys. Lett., 61, 2329 (1992).
3. C. Papadas, G. Ghibaudo, F. Pio, C. Montserié, G. Pananakakis, P. Mortini, C. Riva, Soi. State Electron., 37, 495 (1994).
4. P. Olivo, T. Nguyen, B. Ricco, IEEE Trans, on Electron Devices, ED-35, 2259 (1988).
5. R. Rofan an C.Hu, IEEE Electron Dev Lett, EDL-12, 632 (1991).
6. H. Satake and A. Toriumi, Appl. Phys. Lett., 67, 3489 (1995).
7. K. Okada,S.Kawasaki,Y.Hirofuji Proc. of SSDM, Yokohama, Japan (1994).
8. D. DiMaria and E.Cartier, J. Appl. Phys., 78, (1995).
9. J. DeBlauwe et al, IEDM Tech Digest, p. 343 (1996).
10. A. Scarpa et al, Electronics Letters, 33, 1342 (1997).
11. R. Moazzami and C. Hu , IEDM 1992,p 139
12. R. Kies, PhD thesis, INPG, (1997)