Limiting oxide failure mode versus oxide thickness. Some insights for deep-submicron technologies

International Integrated Reliability Workshop Final Report

Volumn , Issue , 1999, Pages 78-84

  Bruyere, S ^a   Vincent, E ^a   Ghibaudo, G ^a  

^a Central R&D Lab   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; SILICA; STRESSES;

QUASI-BREAKDOWN PHENOMENON; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

MOSFET DEVICES;

EID: 0033282868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)