Effects of Microscopic Fluctuations in Dopant Distributions on MOSFET Threshold Voltage

IEEE Transactions on Electron Devices

Volumn 39, Issue 3, 1992, Pages 634-639

  Nishinohara, Kazumi ^a   Shigyo, Naoyuki ^a   Wada, Tetsunori ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSCOPIC EXAMINATION; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

DOPANT DISTRIBUTIONS; MICROSCOPIC FLUCTUATIONS; MOSFET THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026837975     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.123489     Document Type: Article

References (11)

1. R. W. Keyes, “Physical limits in digital electronics,” Proc. IEEE, vol. 63, p. 740, 1975.
2. T. Hagiwara, K. Yamaguchi, and S. Asai, “Threshold voltage deviation in very small MOS transistors due to local impurity fluctuations,” in Tech. Dig. VLSI Symp., 1982, p. 46.
3. R. H. Dennard, “Technology challenges for ultrasmall MOSFETs,” J. Vac. Sci. Technol., vol. 19, p. 537, 1981.
4. W. Shockley, “Problems related to p-n junctions in silicon,” Solid-State Electron., vol. 2, p. 35, 1961.
5. R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. R. Leblanc, “Design of ion-implanted MOSFETs with very small physical dimensions,” IEEE J. Solid State Circuits, vol. SC-9, p. 256, 1974.
6. G. Baccarani, M. R. Wordeman, and R. H. Dennard, “Generalized scaling theory and its application to a 1/4 micrometer MOSFET design,” IEEE Trans. Electron Devices, vol. ED-31, p. 452, 1984.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
8. T. Wada and R. Dang, “Development and application of a high-speed 2-dimensional time dependent device simulator (MOS2C),” in Proc. NASECODE IV, 1985, p. 108.
9. N. Shigyo and R. Dang, “Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator,” IEEE J. Solid-State Circuits., vol. SC-20 p. 361, 1985.
10. N. Shigyo and T. Wada, “Semiconductor device simulation,” J. IEICE, vol. 74, p. 150, 1991.
11. F. Stem and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev., vol. 163, p. 816, 1967.