A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 165-172

  Yang, Gi Young ^a,b   Hur, Sung Hoi ^a,c   Han, Chul Hi ^a,c  

^a Korea Advanced Institute of Science and Technology ^*

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Kink effect; Polysilicon thin film transistors; Turn on model

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

KINK EFFECTS; PHYSICAL-BASED ANALYTICAL TURN-ON MODELS;

THIN FILM TRANSISTORS;

EID: 0032740570     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737456     Document Type: Article

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