Random MOSFET parameter fluctuation limits to gigascale integration (GSI)

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 198-199

  De, Vivek K ^a   Tang, Xinghai ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION; GEOMETRY; MONTE CARLO METHODS; PROBABILITY; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MODELS; SENSITIVITY ANALYSIS;

DEVICE PARAMETER DISTRIBUTION MODELS; DRAIN INDUCED BARRIER LOWERING; GIGASCALE INTEGRATION; RANDOM MOSFET PARAMETER FLUCTUATION LIMITS; SURFACE POTENTIAL FLUCTUATIONS; THEORY OF PERCOLATION;

MOSFET DEVICES;

EID: 0029714801     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)