Experimental Study of Threshold Voltage Fluctuation Due to Statistical Variation of Channel Dopant Number in MOSFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2216-2221

  Mizuno, Tomohisa ^a   Okamura, Jun ichi ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE; STATISTICS; SUBSTRATES;

CHANNEL DOPANT NUMBER; GATE BIAS; GATE OXIDE THICKNESS; STATISTICAL VARIATION; THRESHOLD VOLTAGE FLUCTUATION;

MOSFET DEVICES;

EID: 0028548950     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333844     Document Type: Article

References (5)

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