Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 160-161

  Xiang, Qi ^a   Yeap, Geoffrey ^a   Bang, David ^a   Song, Miryeong ^a   Ahmed, Khaled ^a   Ibok, Effiong ^a   Lin, Ming Ren ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; TRANSCONDUCTANCE; ULTRATHIN FILMS;

DIRECT TUNNELING (DT) GATE OXIDES; STRESS-INDUCED LEAKAGE;

MOSFET DEVICES;

EID: 0031644047     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)