SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 33, Issue 12, 1990, Pages 1581-1585

Quantum effects in Si n-MOS inversion layer at high substrate concentration

(1) Ohkura, Yasuyuki a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM THEORY; SEMICONDUCTING SILICON--APPLICATIONS;

HIGH SUBSTRATE CONCENTRATION; POISSON'S EQUATION; QUANTUM EFFECTS; SCHROEDINGER'S EQUATION; SEMICONDUCTOR-INSULATOR INTERFACES; SILICON N-MOS INVERSION LAYER;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025682843 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(90)90138-5 Document Type: Article

Times cited : (116)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.