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Solid State Electronics

Volumn 15, Issue 7, 1972, Pages 819-829

Fundamental limitations in microelectronics-I. MOS technology

(2) Hoeneisen, B a Mead, C A a

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000901940 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(72)90103-7 Document Type: Article

Times cited : (279)

References (14)

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2
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- Lenzlinger¹ Snow²

3
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- The mechanism of self-healing electrical breakdown in MOS structures
- (1966) IEEE Transactions on Electron Devices , vol.13 ED , pp. 788
- Klein¹

4
- 84887639874
- Effect of surface fields on the breakdown voltage of planar silicon p-n junctions
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- Grove¹ Leistiko² Hooper³

5
- 84916567421
- B. Hoeneisen and C.A. Mead, IEEE Trans. Electron Devices. To be published

6
- 36849109026
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- Blech¹ Meieran²

7
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- Altman¹

8
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- Weinerth¹

9
- 0009699713
- (1960) Phys. Rev. , vol.118 , pp. 425
- Chynoweth¹

10
- 0000155267
- (1957) Phys. Rev. , vol.105 , pp. 1246
- Miller¹

11
- 84954869129
- Breakdown in Silicon pn Junctions†
- (1959) Journal of Electronics and Control , vol.6 , pp. 130
- Shields¹

12
- 0041495466
- (1963) Phys. Rev. , vol.131 , pp. 89
- Logan¹ Chynoweth²

13
- 84933608362
- Resistivity of Bulk Silicon and of Diffused Layers in Silicon
- (1962) Bell System Technical Journal , vol.41 , pp. 387
- Irvin¹

14
- 0000802863
- (1966) Solid-St. Electron. , vol.9 , pp. 831
- Sze¹ Gibbons²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.