SiGe technology: Heteroepitaxy and high-speed microelectronics

Annual Review of Materials Science

Volumn 30, Issue , 2000, Pages 335-362

  Mooney, P M ^a   Chu, J O ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; HETEROJUNCTIONS; MICROELECTRONICS; MOSFET DEVICES; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN; STRESS RELAXATION;

SILICON GERMANIDE; STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0033693569     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.30.1.335     Document Type: Article

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