Mosaic crystal tilts and their relationship to dislocation structure, surface roughness and growth conditions in relaxed SiGe layers

Materials Research Society Symposium - Proceedings

Volumn 533, Issue , 1998, Pages 77-82

  Wallis, D J ^a   Robbins, D J ^a   Pidduck, A J ^a   Williams, G M ^a   Churchill, A ^a   Newey, J ^a  

^a EOMC   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MOSAIC CRYSTAL TILTS;

HETEROJUNCTIONS;

EID: 0032297364     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-533-77     Document Type: Conference Paper

References (14)