A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 586-588

  Arafa, M ^a,d   Ismail, K ^b,c,d   Chu, J O ^c   Meyerson, B S ^c,d   Adesida, I ^a,d  

^a University of Illinois at Urbana Champaign   (United States)

^b CAIRO UNIVERSITY   (Egypt)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTOR; SILICON GERMANIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030399546     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545779     Document Type: Article

References (8)

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3. V. P. Kesan, S. Subbannma. P. J. Restle, M. J. Tejwani, J. M. Altken, S. S. lyer, and J. A. Ott. "High performance 0.25 μm p-MOSFET's with silicon-germanium channels for 300 K and 77 k operation," in IEDM tech. Dig., 1991, p 25.
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7. K. Ismail, J. O. Chu, and b. S. Meyerson, "High hole mobility in SiGE alloys for device application," Appl. Phys. Lett., vol 64, p. 3124, 1994.
8. U. K. Mishra, A. S. Brown, L. M. Jellian, M. Thompson, L. D. Nguyen, and S. E. Rosenbaum, "Nove; high performance self-aligned 0.15 micron long T-gate AllnAs-GalnAs HEMT's," in IEDM Tech. Dig., 1989, pp. 101-104.