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Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 593-597

Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

(1) Batson, P E a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; STACKING FAULTS;

MISFIT DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0033337842 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00581-5 Document Type: Article

Times cited : (6)

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