Interaction of threading and misfit dislocations in a strained epitaxial layer

Applied Physics Letters

Volumn 69, Issue 9, 1996, Pages 1220-1222

  Schwarz, K W ^a   Tersoff, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001003633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117417     Document Type: Article

References (17)

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7. This can be derived from Eqs. (4)-(30) of J. P. Hirth and J. Lothe, Theory of Dislocations (Krieger, Malabar, FL, 1992), p. 105.
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9. J. Lothe, in Elastic Strain Fields and Dislocation Mobility, edited by V. L. Indenbom and J. Lothe (North-Holland, Amsterdam, 1992).
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14. L. M. Brown, Philos. Mag. 10, 441 (1964).
15. 3, and Poisson ratio θ=0.234. Our conclusions are not sensitive to these values. The strain is related to the Ge concentration by ∈ ≈ -0.042x, although we have framed our discussion in terms of response to a positive strain.
16. We have also performed calculations for the case in which an image D2′ of D2 is placed in the upper interface, this being a closer approximation to the free-surface problem. The strain required to drive D1 past D2, D2′ is only about three percent greater than that needed to drive D1 past D2 alone.
17. J.-C. Ramirez, A. Bower, and L. B. Freund have performed some preliminary calculations in which the shape of D1 is allowed to vary (unpublished).