High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

Electronics Letters

Volumn 35, Issue 1, 1999, Pages 86-87

  Koester, S J ^a   Chu, J O ^a   Groves, R A ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VACUUM APPLICATIONS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV-CVD);

FIELD EFFECT TRANSISTORS;

EID: 0033530988     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990075     Document Type: Article

References (4)

1. ISMAIL, K.: 'Si/SiGe hieh-speed field-effect transistors', IEDM Tech. Dig., 1995, pp. 509-512
2. max n-type Si/SiGe MODFETs', Electron. Lett., 1997, 33, pp. 335-337
3. KÖNIG, U., GLÜCK, M., and HÖCK, G.: 'Si/SiGe field-effect transistors', J. Vac. Sci. Technol. B, 1998, 16, pp. 2609-2614
4. x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation', J. Appl. Phys., 1997, 82, pp. 3911-3916