High-performance 0.1μm gate-length Ge/Si0.4Ge0.6 p-channel MODFETs

Electronics Letters

Volumn 35, Issue 18, 1999, Pages 1590-1591

  Hammond, R ^a   Koester, S J ^a   Chu, J O ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

HALL MOBILITY; MODFET DEVICES; ROOM TEMPERATURE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION; VOLTAGE GAIN;

FIELD EFFECT TRANSISTORS;

EID: 0033366077     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991036     Document Type: Article

References (4)

1. T low operating bias self aligned p-type SiGe MODFET', IEEE Electron Dev. Lett., 1996, 17, pp. 586-588
2. HÖCK, G., HACKBARTH, T., ERBEN, U., KOHN, KOHN, and KÖNIG, U.: 'High performance 0.25μm p-type Ge/SiGe MODFETs', Electron. Lett., 1998, 34, pp. 1888-1889
3. 1-x/Ge structures grown by molecular beam epitaxy', Appl. Phys. Lett., 1993, 63, pp. 2263-2264
4. TAUR, Y., COHEN, S., WIND, S., LII, T., HSU, C., QUINLAN, D., CHANG, C., BUCHANAN, D., AGNELLO, P., MII, Y., REEVES, C., ACOVIC, A., and KESAN, V.: 'High transconductance 0.1μm pMOSFET', IEDM Tech. Dig., 1992, pp. 901-904