High fmax n-type Si/SiGe MODFETs

Electronics Letters

Volumn 33, Issue 4, 1997, Pages 335-337

  Gluck M ^a   Hackbarth, T ^a   Konig U ^a   Haas, A ^b   Hock G ^b   Kohn, E ^b  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Field effect transistors; MODFET

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTOR (MODFET); TWO DIMENSIONAL ELECTROGAS CHANNEL;

FIELD EFFECT TRANSISTORS;

EID: 0031075556     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970198     Document Type: Article

References (6)

1. ISMAIL, K., MEYERSON, B.S., RISHTON, S., CHU, J., NELSON, S., and NOCERA, J.: 'High-transconductance n-type Si/SiGe modulation-doped field-effect transistors', IEEE Electron Dev. Lett., 1992, 13, pp. 229-231
2. KÖNIG, U., BOERS, A.J., SCHÄFFLER, F., and KASPER, E.: 'Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance', Electron. Lett., 1992, 28, pp. 160-162
3. ISMAIL, K.: 'Si/SiGe high-speed field-effect transistors'. Proc. IEDM'95, Washington, 1995, pp. 509-512
4. ARAFA, M., ISMAIL, K., CHU, J.O., and ADESIDA, I.: 'High performance self-aligned SiGe p-type modulation-doped field-effect transistors'. Proc. 54th Device Research Conf., Santa Barbara, 1996, pp. 24-25
5. KÖNIG, U., GLÜCK, M., GRUHLE, A., HÖCK, G., KOHN, E., BOZON, B., NUERNBERGK, D., OSTERMANN, T., and HAGELAUER, R.: 'Design rules for n-type SiGe hetero FETs'. IEEE Topical Workshop on Heterostructure Microelectronics (TWHM'96), Sapporo, 1996
6. SADEK, A., ISMAIL, K., ARMSTRONG, M.A., ANTONIADIS, D.A., and STERN, F.: 'Design of Si/SiGe heterojunction complementary metaloxide-semiconductor transistors', IEEE Trans. Electron Dev., 1996, 43, (8), pp. 1224-1232