Atomic layer doping of SiGe by low pressure (rapid thermal) chemical vapor deposition

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 15-17

  Tillack, B ^a   Kruger D ^a   Gaworzewski, P ^a   Ritter, G ^a  

^a IHP   (Germany)

Author keywords

Low pressure chemical vapor deposition; Phosphorus doping; SiGe

Indexed keywords

ADSORPTION; ADSORPTION ISOTHERMS; CHEMICAL VAPOR DEPOSITION; HALL EFFECT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ATOMIC LAYER DOPING; LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 0031069220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09461-8     Document Type: Article

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