Interactions of moving dislocations in semiconductors with point, line and planar defects

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 133-146

  Hull, R ^a   Stach, E A ^a,c   Tromp, R ^b   Ross, F ^b   Reuter, M ^b  

^a University of Virginia   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c National Center for Electron Microscopy   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTING SILICON; STRAIN; STRESS ANALYSIS;

LINE DEFECTS; PLANAR DEFECTS;

HETEROJUNCTIONS;

EID: 0032755309     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<133::AID-PSSA133>3.0.CO;2-D     Document Type: Article

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