Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1074-1076

  Shum, Kai ^a,b   Mooney, P M ^b   Chu, J O ^b  

^a City University of New York   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001172359     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119732     Document Type: Article

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