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Volumn 17, Issue 3, 1996, Pages 105-146

Strain relaxation and dislocations in SiGe/Si structures

Author keywords

Dislocations; Electronic properties; Strain relaxation

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; LATTICE CONSTANTS; MICROELECTRONICS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GERMANIUM; STRESS RELAXATION; THIN FILMS;

EID: 0030287605     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(96)00192-1     Document Type: Article
Times cited : (138)

References (135)
  • 2
  • 33
    • 0042818305 scopus 로고    scopus 로고
    • personal communication
    • K. Ismail, personal communication, 1996.
    • (1996)
    • Ismail, K.1
  • 38
    • 0342709009 scopus 로고
    • J.H. Van der Merwe, J. Appl. Phys., 34 (1963) 117; J.H. Van der Merwe, J. Appl. Phys., 34 (1963) 123.
    • (1963) J. Appl. Phys. , vol.34 , pp. 117
    • Van Der Merwe, J.H.1
  • 39
    • 36849116975 scopus 로고
    • J.H. Van der Merwe, J. Appl. Phys., 34 (1963) 117; J.H. Van der Merwe, J. Appl. Phys., 34 (1963) 123.
    • (1963) J. Appl. Phys. , vol.34 , pp. 123
    • Van Der Merwe, J.H.1
  • 43
    • 0004291219 scopus 로고
    • International Series on Materials Science and Technology, Ch. 3, Pergamon, New York
    • D. Hull and D.J. Bacon, Introduction to Dislocations, 3rd Edition, International Series on Materials Science and Technology, Vol. 37, Ch. 3, Pergamon, New York, 1984.
    • (1984) Introduction to Dislocations, 3rd Edition , vol.37
    • Hull, D.1    Bacon, D.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.