Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 1931-1937

  Stach, E A ^a   Hull, R ^a   Tromp, R M ^b   Reuter, M C ^b   Copel, M ^b   LeGoues, F K ^b   Bean, J C ^a  

^a University of Virginia   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000369561     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366984     Document Type: Article

References (40)

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