SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 877-880

Comparison of SiO2 and AIN as gate dielectric for SiC MOS structures

(6) Zetterling, C M a Ostling M a Harris, C I b Nordell, N b Wongchotigul, K c Spencer, M G c

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b ACREO AB (Sweden)

c HOWARD UNIVERSITY (United States)

Author keywords

Aluminum Nitride; Metal Organic Chemical Vapor Deposition; Silicon Dioxide; Thermal Oxidation

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC CHARGE; FILM GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMOOXIDATION;

ALUMINUM NITRIDE; GATE DIELECTRICS;

MOS DEVICES;

EID: 0031648334 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Review

Times cited : (16)

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