Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO 2/SiC MOS system and MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 504-510

  Yano, Hiroshi ^a   Katafuchi, Fumito ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^b  

^a IEEE   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Deep interface states; Fixed oxide charges; Interface; MOS; Mosfet's; Reoxidation anneal; Silicon carbide; Wet oxidation

Indexed keywords

ANNEALING; ELECTRIC CHARGE; MOS CAPACITORS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THERMOOXIDATION; THRESHOLD VOLTAGE;

REOXIDATION ANNEALING; WET OXIDATION;

MOSFET DEVICES;

EID: 0033100053     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748869     Document Type: Article

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