The effect of thermal processing on polycrystalline silicon/SiO2/6H-SiC metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2231-2233

  Xie, W ^a   Shenoy, J N ^a   Sheppard, S T ^a   Melloch, M R ^a   Cooper Jr , J A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000088192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115868     Document Type: Article

References (16)

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