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Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 845-848

Effects of the cooling-off condition on the oxidation process in 6H-SiC

(1) Ueno, K a

a FUJI ELECTRIC CO (Japan)

Author keywords

6H SiC; Bias Temperature Treatment; C V Characteristic; Mobility; MOSFET; Oxidation; Stability; Surface; Surface State

Indexed keywords

COOLING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMOOXIDATION;

PYROGENIC OXIDATION; SURFACE STATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031697841 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.845 Document Type: Article

Times cited : (5)

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